Medição precisa das perdas de comutação em dispositivos de potência SiC/GaN
Wide-bandgap semiconductors have reset the performance envelope for power conversion. Silicon carbide (SiC) MOSFETs and gallium nitride (GaN) HEMTs switch in tens of nanoseconds rather than the hundreds of nanoseconds typical of silicon IGBTs, and they do so at higher voltages and junction temperatures. That speed is precisely what makes them attractive for EV traction […]